Projects
- Brief description of the project
- Structure and properties of networks of nanoscopic magnetic wires
- Electronic structure of artificial atoms and molecules: spin-orbit coupling effects
- Computer simulations of quantum transport in semiconductor nanodevices
- Surfactants, polyelectrolytes and nanoparticles as building blocks for surface nanostructures
- Design and computer simulations of the nanodevices to applications in quantum computing
- Current induced magnetization switching (CIMS) and noise characterization of MgO based magnetic tunnel junctions (MTJs)
- Dynamics of nanostructural organization and activity of photosynthetic systems in natural and model membranes
In 2009 five more PhD positions will be opened:
- Computer modeling of biological nanostructures
- Surface and interface properties of metal-oxide magnetic nanostructures
- Hybrid organic-inorganic layered materials - precursors of semiconducting nanostructures
- Physical properties of multilayer thin films of Mg-Ti-V/Ni and their hydrides
- Nanostructures and stability of thin liquid layers
Current induced magnetization switching (CIMS) and noise characterization of MgO based magnetic tunnel junctions (MTJs)
Supervisor:
Prof. Tomasz Stobiecki, AGH Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Electronics ()
Student:
Witold Skowroński (EAIE AGH)
Topic:
Current induced magnetization switching (CIMS) and noise characterization of MgO based magnetic tunnel junctions (MTJs)
Foreign partner:
Prof. Günter Reiss and Prof. Andreas Hütten, Bielefeld University, D2 Thin Films & Physics of Nanostructures Universitätsstraße 25, 33615 Bielefeld
Brief description:
Spin eletronics is an expanding research field, which comprehends
magnetic thin film devices exploiting the quantum spin states of the electron, apart from its
charge, in order to boost the existing functionality of conventional electronics. The giant
magnetoresistance effect, encountered in all-metal magnetic multilayers, has already found
application in state-of-the-art hard disk read heads. Moreover, magnetic random access
memory (MRAM), based on the tunnel magnetoresistance in ferromagnet-insulatorferromagnet
junctions, is broadly anticipated to become the near future’s universal storage
medium.
Base on the years of bilateral collaboration between AGH Department of Electronics group of
Magnetic Multilayers (chaired by Prof. Tomasz Stobiecki) and University of Bielefeld, group
of Thin Films & Physics of Nanostructures (lead by Prof. Günter Reiss) we have decided to
jointly implement project Magnetic nanostructures for spin electronics applications in the
frame of PhD studies. Because the stage of magnetic tunnel junctions (MTJs) with high tunnel
magnetoresistance ratio (TMR) and low resistance area product (RA) has been achieved, now
challenging from the applications point view are two tasks: optimization of the current density
for magnetization switching in nanopillars (MRAM cells) and noise characterization of the
pillars junctions. The so called spin torque switching will be investigated as well to further
lower the size and enhance the performance of integrated spin electronic devices.
We propose preliminary title of the PhD thesis: Current induced magnetization switching
(CIMS) and noise characterization of MgO based MTJs.
In the laboratory of Thin Films & Physics of Nanostructures at the University of Bielefeld, the
stage of the deposition, nanolithography and preliminary characterization of the electrical and
magnetic parameters of prepared exchange biased spin valve and pseudo-spin valve
nanostructures will be realized. In order to optimize the TMR ratio and RA new ferromagnetic
electrodes systems, as amorphous CoFeB and Heusler alloys Co2MnSi, and high crystalline
ordered MgO tunnel barrier will be investigated, because theoretical calculations predict very
high spin-polarization at the Fermi-level for these compounds.
In the laboratory of the Magnetic Multilayers at AGH, the equipment for CIMS and noise
measurements will be designed. The prepared multilayers will be characterized at AGH:
electrically (TMR and I-V measurements), magnetically (MOKE magnetooptical Kerr effect,
magnetometry and magnetic domain observations) and structurally (XRD and AFM).
Students international exchange:
Two 6-months visits of the PhD-student in Bielefeld is planned during the reporting period II and V. The Germany partner has clean room equipped by high vacuum sputtering and electron-lithography systems for MTJs preparation in the nanopillar form with spatial resolution below 10 nm. In the frame of two visits is expected preparation in the clean room of MTJs and preliminary characterization of the samples using this methods which are not available at AGH.